In/out pad electrostatic discharge protection for sub-micron integrated circuits based on lateral bipolar transistor
29.06.2015

Current status is presented for the development and experimental verifcation of 0.18 μm high voltage CMOS integrated circuits with pad-based ESD protection made with the use of lateral bipolar transistor. Developed I/O pads provide 2000 V ESD protection.

Karpovich, M.S., Pichugin, I.V., Vasilyev, V.Yu. In/out pad electrostatic discharge protection for sub-micron integrated circuits based on lateral bipolar transistor // 16th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM). – 2015. – P.100-103.

DOI: 10.1109/EDM.2015.7184499